| PART |
Description |
Maker |
| 1SS301 |
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ)
Ultra High Speed Switching Application
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| R0605300L2 |
Si Reverse, low current, 5 - 65 MHz, 30.0dB typ. Gain @ 65MHz, 140mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| 1SV128 |
VHF锝?HF Band RF Attenuator Applications
Small Total Capacitance : CT = 0.25 pF(Typ.) Reverse Vo ltage VR 50V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| R2005200P12 |
GaAs Reverse, 5 - 200MHz, 20.0dB typ. Gain @ 200MHz, 360mA max. @ 12VDC
|
PDI[PREMIER DEVICES, INC.]
|
| 1SS294 |
Small package Low forward voltage: VF(3) = 0.54 V(Typ).Low reverse current: IR = 5A(Max).
|
TY Semiconductor Co., Ltd
|
| R2005280L |
Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| R0605400L |
Si Reverse, low current, 5 - 65MHz, 40.3dB typ. Gain @ 65MHz, 160mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| VTS3186 VTS3086 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
